型号 | 厂商 | 批号 | 封装 | 说明 |
IDD23E60
| INFINEON | 10+ | SOT-252 | 肖特基二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDD15E60
| INFINEON | 10+ | SOT-252 | 肖特基二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDD09E60
| INFINEON | 2010+ | PG-TO252-3 | 快恢复二极管600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDD06E60
| INFINEON | 2010+ | PG-TO252-3 | 600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA |
IDD03E60
| INFINEON | 2010+ | PG-TO252-3 | 600V Silicon Power Diodes; Package: PG-TO252-3; IF (typ): 3.0 A; IF (max): 7.3 A; IF,SM (max): 16.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB45E60
| INFINEON | 2010+ | TO-263 | 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 45.0 A; IF (max): 71.0 A; IF,SM (max): 162.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB30E60
| INFINEON | 2010+ | TO-263 | 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 52.3 A; IF,SM (max): 117.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB30E120
| INFINEON | 2010+ | TO-263 | 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 30.0 A; IF (max): 50.0 A; IF,SM (max): 102.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB23E60
| Infineon | 2010+ | SOT263 | 600V Silicon Power Diodes; Package: P-TO263-3; IF (typ): 23.0 A; IF (max): 41.0 A; IF,SM (max): 89.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB18E120
| Infineon | 2010+ | SOT263 | 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 18.0 A; IF (max): 31.0 A; IF,SM (max): 78.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB15E60
| Infineon | 2010+ | P-TO220-3-4 | 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB12E120
| Infineon | 2010+ | P-TO220-3-4 | 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB09E60
| Infineon | 2010+ | TO-263 | 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB09E120
| Infineon | 2010+ | TO-263 | 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
IDB06E60
| Infineon | 2010+ | TO-263 | 600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA; |
IDB04E120
| Infineon | 2010+ | TO-263 | 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA; |
ILP03N60
| INFINEON | 11+ | TO-220 | 3A,600V 可控硅 |
FZ1200R33KL2C
| INFINEON | 11+ | 模块 | 3300V IGBT模块, |
IKW75N60T
| INFINEON | 11+ | TO-247 | 整流二极管 |
IKW30N60T
| INFINEON | 11+ | TO-247 | 整流二极管 |