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IDB04E120
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IDB04E120

  • 所属类别:整流二极管
  • 产品名称:1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
  • 厂商:Infineon
  • 生产批号:2010+
  • 封装:TO-263
  • 库存状态:有库存
  • 库存量:12000
  • 最低订购量:1
  • 详细资料:点击查找IDB04E120的pdf资料
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  • 产品介绍

IDB04E120 1200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 4.0 A; IF (max): 11.2 A; IF,SM (max): 28.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;

IDB04E120相关的IC还有:


型号厂商批号封装说明
IDB15E60 Infineon2010+P-TO220-3-4600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 15.0 A; IF (max): 29.2 A; IF,SM (max): 60.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB12E120 Infineon2010+P-TO220-3-41200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 12.0 A; IF (max): 28.0 A; IF,SM (max): 63.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB09E60 Infineon2010+TO-263600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 19.3 A; IF,SM (max): 40.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
IDB09E120 Infineon2010+TO-2631200V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 9.0 A; IF (max): 23.0 A; IF,SM (max): 50.0 A; VF (typ): 1.65 V; IR (max): 100.0 µA;
IDB06E60 Infineon2010+TO-263600V Silicon Power Diodes; Package: PG-TO263-3; IF (typ): 6.0 A; IF (max): 14.7 A; IF,SM (max): 29.0 A; VF (typ): 1.5 V; IR (max): 50.0 µA;
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