| åå· | åå | æ¹å· | å°è£ | è ̄'æ |
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IRLR024TRPBF
| IR | 11+ | TO-252/D-PAK | HEXFET Power MOSFET (HEXFET åçMOSåºæåºç®¡) |
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IRLR024TRR
| IR | 11+ | TO-252/D-PAK | HEXFET Power MOSFET (HEXFET åçMOSåºæåºç®¡) |
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IRLR110
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
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IRLR110PBF
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
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IRLR110TR
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
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IRLR110TRL
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
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IRLR110TRLPBF
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
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IRLR110TRPBF
| IR | 11+ | TO-252/D-PAK | MOSFET N-CH 100V 4.3A DPAK |
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IRLML0030TRPBF
| IR | 11+ | SOT23-3 | å¢å1/4ºåºæåºæ¶ä1/2管é»è3/4çμå¹³ |
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IRFBC20
| IR | 2010+ | TO-220 | åçMOSFET (Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) |
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IRF5210STRLPBF
| IR | 09+ | TO-263 | Nééåºæåºç®¡HEXFET Power MOSFET |
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IRF5210STRRPBF
| IR | 09+ | TO-263 | Nééåºæåºç®¡HEXFET Power MOSFET |
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IRF9530NSTRLPBF
| IR | 2010+ | TO-263 | 100V Nééåºæåºç®¡-100V Single P-Channel HEXFET Power MOSFET in einem D2-Pak-Gehäuse; Ähnlich wie IRF9530NSTRL mit bleifreier Verpackung |
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IRF9530NSPBF
| IR | 2010+ | TO-263 | Nééåºæåºç®¡ Advanced Process Technology Surface Mount |
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IRF9520NSTRRPBF
| IR | 2010+ | D2 PAK | 100V Nééåºæåºç®¡ -100V Single P-Channel HEXFET Power MOSFET in einem D2-Pak-Gehäuse; Ähnlich wie IRF9520NSTRR mit bleifreier Verpackung |
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IRF9520NSTRLPBF
| IR | 2010+ | TO-263 | Nééåºæåºç®¡ HEXFET㢠Power MOSFET |
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IRF9520NSPBF
| IR | 2010+ | D2-pak | Nééåºæåºç®¡ HEXFET㢠Power MOSFET |
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IRF6218PBF
| IR | 2010+ | TO-220 | Nééåºæåºç®¡ HEXFET㢠Power MOSFET |
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IRF6216PBF
| IR | 2010+ | SOP-8 | Nééåºæåºç®¡ -150V Single P-Channel HEXFET Power MOSFET in einem SO-8-Gehäuse; Ein IRF6216 mit Standardverpackung |
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IR1150IPBF
| IR | 10+ | DIP-8 | IR1150IPBF,åºæåºç®¡ |