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IRFR9024TRPBF
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IRFR9024TRPBF

  • 所属类别：场效应管
  • 产品名称：P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））
  • 厂商：VISHAY
  • 生产批号：10+
  • 封装：TO-252
  • 库存状态：有库存
  • 库存量：8000
  • 最低订购量：1
  • 详细资料：点击查找IRFR9024TRPBF的pdf资料
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  • 产品介绍

IRFR9024TRPBF  P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））

与IRFR9024TRPBF相关的IC还有：


型号厂商批号封装说明
IRFR9024TRPBF VISHAY10+TO-252P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））

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型号厂商批号封装说明
IRFR9024TRLPBF VISHAY10+TO-252P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））
IRFR9024TRL VISHAY10+TO-252P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））
IRFR9024TR VISHAY10+TO-252P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））
IRFR9024PBF VISHAY10+TO-252P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））
IRFR9024 VISHAY10+TO-252P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））
IRFR9110TRPBF VISHAY10+TO-2523.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管)
IRFR9110TRLPBF VISHAY10+TO-2523.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管)
IRFR9110TRL VISHAY10+TO-2523.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管)
IRFR9110TR VISHAY10+TO-2523.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管)
IRFR9110PBF VISHAY10+TO-2523.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管)
IRFR9110 VISHAY10+TO-2523.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管)
IRFR9120TRRPBF VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P沟道功率MOS场效应管)
IRFR9120TRR VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P沟道功率MOS场效应管)
IRFR9120TRPBF VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P沟道功率MOS场效应管)
IRFR9120TRLPBF VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P沟道功率MOS场效应管)
IRFR9120TRL VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P沟道功率MOS场效应管)
IRFR9120TR VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P沟道功率MOS场效应管)
IRFR9120PBF VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P沟道功率MOS场效应管)
IRFR9120 VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 Ω, P沟道功率MOS场效应管)
IRFU010 VISHAY10+TO-251N-CHANNEL POWER MOSFET

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