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  • 产åå称ï1/45.6A, 100V, 0.600 Ohm, MOSFET de potencia de canal P (5.6A, 100V, 0.600 Ω, Pæ²éåçMOSåºæåºç®¡)
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IRFR9120TRLPBF5.6A, 100V, 0.600 Ohm, MOSFET de potencia de canal P (5.6A, 100V, 0.600 Ω, Pæ²éåçMOSåºæåºç®¡)

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IRFR9120TRLPBF VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, MOSFET de potencia de canal P (5.6A, 100V, 0.600 Ω, Pæ²éåçMOSåºæåºç®¡)

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KH208-8 Vitrohm24+ZAMBULLIDAResistencia, 100 miliohmios, 10%, 5 W, con cable axial, bobinado, potencia (alt: KHS500KB-AX-R1AA)
GAP26MDS5T0000 Anfenol Positrónico23+ZAMBULLIDA©ç å1/2¢ MIL è§æ 1/4è¿æ¥å ̈
EE046-T11 å3/4·å1/2E+E24+æ ̈¡åå·åæ£æμ仪
A309560C7W Tecnologías energéticas de Amphenol24+è¿æ¥å ̈Conector 309, 3P + N + E / 5W - 60A - Conector - 277/480V keway 7h, IP67
HBL430B7W Cableado de las instalaciones de Hubbell24+è¿æ¥å ̈PS, IEC, ENTRADA, 3P4W, 30A 3P 480V,4X/69K
621N-18F-10-6S Corporación Amphenol24+è¿æ¥å ̈Conector circular Conector macho tamaño 10
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D-U307-KLS Mors Smitt24+继çμå ̈relé - Enchufable, 4 polos, bobina de CA
TDB4-U204-C Mors Smitt24+继çμå ̈延æ¶ç»§çμå ̈
ABCIRH01RC2214PCNF80M32V0 Conectores AB23+è¿æ¥å ̈è¿æ¥å ̈å¥è£
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AB0521001412PN00 Conectores AB24+è¿æ¥å ̈åå1/2¢è¿æ¥å ̈, AB05, MIL-DTL-26482 Iç³»å, å¢å£å®è£ æ座, 12 触ç¹, çæ¥å1/4è, å¡å£
TM-I2000/115-230P ABB24+ååå ̈Transformador monofásico de control y aislamiento
C25-1AX-H13-N-HB-L HAIMOOO24+æ§å¶æææ§å¶ææ
F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 LÓGICA DE DATOS22+ZAMBULLIDASensores fotoeléctricos
M393A8G40BB4-CWE Samsung (Estados Unidos)21+BGASamsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba21+ZAMBULLIDAOptoacoplador DC-IN Transistor de 1 canal con base DC-OUT PDIP de 8 pines
D-U204-ELK Mors Smitt24+继çμå ̈ç¬æ¶ç»§çμå ̈

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IRFR9120TRL VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, MOSFET de potencia de canal P (5.6A, 100V, 0.600 Ω, Pæ²éåçMOSåºæåºç®¡)
IRFR9120TR VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, MOSFET de potencia de canal P (5.6A, 100V, 0.600 Ω, Pæ²éåçMOSåºæåºç®¡)
IRFR9120PBF VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, MOSFET de potencia de canal P (5.6A, 100V, 0.600 Ω, Pæ²éåçMOSåºæåºç®¡)
IRFR9120 VISHAY10+TO-2525.6A, 100V, 0.600 Ohm, MOSFET de potencia de canal P (5.6A, 100V, 0.600 Ω, Pæ²éåçMOSåºæåºç®¡)
IRFU010 VISHAY10+TO-251MOSFET DE POTENCIA DE CANAL N
IRFU014 VISHAY10+TO-251MOSFET N-CH 60V 7.7A I-PAK
IRFU014PBF VISHAY10+TO-251MOSFET N-CH 60V 7.7A I-PAK
IRFU020 VISHAY10+TO-251MOSFET N-CH 50V 15A I-PAK
IRFU022 VISHAY10+TO-251TRANSISTOR | MOSFET | CANAL N | 50V V(BR)DSS | 14A I(D) | TO-251AA
IRFU024 VISHAY10+TO-251MOSFET N-CH 60V 14A I-PAK
IRFU024PBF VISHAY10+TO-251MOSFET N-CH 60V 14A I-PAK
IRFU110 VISHAY10+TO-251MOSFET N-CH 100V 4.3A I-PAK
IRFU110PBF VISHAY10+TO-251MOSFET N-CH 100V 4.3A I-PAK
IRFU120 VISHAY10+TO-251MOSFET N-CH 200V 2.6A I-PAK
IRFU120PBF VISHAY10+TO-251MOSFET N-CH 200V 2.6A I-PAK
IRFU210 VISHAY10+TO-251MOSFET N-CH 200V 2.6A I-PAK
IRFU210PBF VISHAY10+TO-251MOSFET N-CH 200V 2.6A I-PAK
IRFU220 VISHAY10+TO-251MOSFET N-CH 200V 4.8A I-PAK
IRFU220PBF VISHAY10+TO-251MOSFET N-CH 200V 4.8A I-PAK
IRFU9010 VISHAY10+TO-251TRANSISTOR | MOSFET | CANAL P | 50V V(BR)DSS | 4.5A I(D) | TO-251AA

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