型号 | 厂商 | 批号 | 封装 | 说明 |
IRFR9014
| VISHAY | 10+ | SOT252 | MOSFET P-CH 60V 5.1A DPAK |
IRFR9020TRR
| VISHAY | 10+ | SOT252 | MOSFET P-CH 50V 9.9A DPAK |
IRFR9020TRL
| VISHAY | 10+ | SOT252 | MOSFET P-CH 50V 9.9A DPAK |
IRFR9020TR
| VISHAY | 10+ | SOT252 | MOSFET P-CH 50V 9.9A DPAK |
IRFR9020
| VISHAY | 10+ | SOT252 | MOSFET P-CH 50V 9.9A DPAK |
IRFR9022
| VISHAY | 10+ | SOT252 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
IRFR9024TRRPBF
| VISHAY | 10+ | TO-252 | P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024TRR
| VISHAY | 10+ | TO-252 | P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024TRPBF
| VISHAY | 10+ | TO-252 | P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024TRLPBF
| VISHAY | 10+ | TO-252 | P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024TRL
| VISHAY | 10+ | TO-252 | P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024TR
| VISHAY | 10+ | TO-252 | P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024PBF
| VISHAY | 10+ | TO-252 | P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024
| VISHAY | 10+ | TO-252 | P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9110TRPBF
| VISHAY | 10+ | TO-252 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |
IRFR9110TRLPBF
| VISHAY | 10+ | TO-252 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |
IRFR9110TRL
| VISHAY | 10+ | TO-252 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |
IRFR9110TR
| VISHAY | 10+ | TO-252 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |
IRFR9110PBF
| VISHAY | 10+ | TO-252 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |
IRFR9110
| VISHAY | 10+ | TO-252 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |