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BSO350N03XT INFINEON11+SOP-8N-Kanal 20V 250V Mosfet(â¦); å è£ :P G-DSO-8; å è£ :SO-8; VDSå ¬å ̧(æé«):30,0 V; å ³ç³»åæ°æ®åº(å ̈)(æé«)(@10V):è3/43/4å°mOhmå ³ç³»åæ°æ®åº(å ̈); (æé«) (@4,5 V):52,0 mOhm; ID(æé«):5.0 A
BSO350N03 INFINEON10+SOP-8Næ²éåçåºæåºç®¡
BSO300N03SXT INFINEON10+SOP-8Næ²éåçåºæåºç®¡
BSO200N03SXT INFINEON10+SOP-8Næ²éåçåºæåºç®¡
BSO200N03S INFINEON10+SOP-8Næ²éåçåºæåºç®¡
BSO200N03 INFINEON10+SOP-8Næ²éåçåºæåºç®¡
BSO150N03XT INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 15,0 mOhm; RDS (ein) (max.) (@4,5 V): 19,0 mOhm
BSO150N03 INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 15,0 mOhm; RDS (ein) (max.) (@4,5 V): 19,0 mOhm

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Nr. Z52929 ITT24+è¿æ¥å ̈Standard-Rundsteckverbinder CIR 3C 3#12 FR PIN RECP
JAE. JIT. OCHSE-16 JAE Elektronik2023+è¿æ¥å ̈16#ééå ̈
RCS20M-12RD28 SOURIAU-SONNENBANK2023+è¿æ¥å ̈Zirkuläre MIL-Spezifikationskontakte CONTACT
PW620-41M5kΩ129 FSG24+çμä1/2å ̈PW620-41 M 5k Ω/129°Çμä1/2Å ̈
CU-U-201-GE Mors Smitt24+继çμå ̈继çμå ̈
FRCIR06-32-8P-F80-T108 ITT Interconnect-Lösungen24+è¿æ¥å ̈CIR 30C 24#16 6#12 STECKER
Artikel-Nr.: SPCI-001-500 欧米è24+DIPè£ ̧ççμå¶çº¿ï1/4JN ï1/4线è1/2'ï1/4 | 欧米è éç»ç1/4 T/C 线ï1/4ç»ç'å3/4ï1/4J å ï1/4-ï1/4ï1/4500' çμç1/4ï1/450 AWGï1/40 °C è³ 315 °Cï1/432 °F è³ 600 °Fï1/4ï1/4SPCI ç³»åï1/4线è1/2"
ET-JL06-18 JAE Elektronik2023+å·¥å ·æééå·¥å ·
JL06-28-SONSTIGES JAE Elektronik24+è¿æ¥å ̈27P
LRC-LRF2512LF-01-R005-F TT23+2512Strommesswiderstände - SMD 2 Watt .005 Ohm 1%
ABCIRH06T2214SCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈ABCIRHç³»åè¿æ¥å ̈ç»ä»¶ å ̈æ°åè£ è¿å£ ç°è'§
ABCIRH00T2214PCWF80M32V0 AB Steckverbinder25+è¿æ¥å ̈onnector Reverse Bajonett Kupplung Rund RCP 14S-5 ST Kastenhalterung - Bulk
ABB1240KLKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
ABB1240KPKF80P3 AB Steckverbinder24+è¿æ¥å ̈Kontaktstift Größe 12. AWG 40 Draht
RDE7U3A472J4K1H03B Murata Manufacturing Co Ltd24+DIPKondensator: Keramik, 4,7nF, 1kV, U2J, ±5%, THT, 5mm
C195S/24EV-U2 æ²å°ç¹å®24+DIPè1/2 ̈éè¡ä ̧ä ̧ç ̈æ¥è§¦å ̈C195S/24EV-U2 ç°è'§ç¹ä»·åºå2000åª
ABCIRHSE06T16S8SCNF80M32V0 AB Steckverbinder24+è¿æ¥å ̈Zirkulärer MIL Spec Steckverbinder ER 5C 5#16S SKT STECKER
RDE7U3A150J2K1H03B Murata Manufacturing Co Ltd24+çμ容Kondensator: Keramik, 15pF, 1kV, U2J, ±5%, THT, 5mm
PS-34PE-D4LT1-LP1 JAE Elektronik24+è¿æ¥å ̈STECKLEISTE R/A 34POS 2.54MM
A22NN-BG-NWA-G101-NN OMRON Corporation24+æé®ASSM, FG, PLAS BZL, WHTE, 2 NO - Bulk (Alt: A22NNBGMNWAG101NN)

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BSO200N03SXT INFINEON10+SOP-8Næ²éåçåºæåºç®¡
BSO200N03S INFINEON10+SOP-8Næ²éåçåºæåºç®¡
BSO200N03 INFINEON10+SOP-8Næ²éåçåºæåºç®¡
BSO150N03XT INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 15,0 mOhm; RDS (ein) (max.) (@4,5 V): 19,0 mOhm
BSO150N03 INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 15,0 mOhm; RDS (ein) (max.) (@4,5 V): 19,0 mOhm
BSO119N03SXT INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 11,9 mOhm; RDS (ein) (max.) (@4,5 V): 16,3 mOhm
BSO119N03S INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 11,9 mOhm; RDS (ein) (max.) (@4,5 V): 16,3 mOhm
BSO104N03SXT INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,7 mOhm; RDS (ein) (max.) (@4,5 V): 13,6 mOhm;
BSO104N03S INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,7 mOhm; RDS (ein) (max.) (@4,5 V): 13,6 mOhm;
BSO094N03SXT INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,1 mOhm; RDS (ein) (max.) (@4,5 V): 12,9 mOhm;
BSO094N03S INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,1 mOhm; RDS (ein) (max.) (@4,5 V): 12,9 mOhm;
BSO072N03SXT INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 6,8 mOhm; RDS (ein) (max.) (@4,5 V): 9,3 mOhm;
BSO072N03S INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 6,8 mOhm; RDS (ein) (max.) (@4,5 V): 9,3 mOhm;
BSO064N03SXT INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 6,4 mOhm; RDS (ein) (max.) (@4,5 V): 8,8 mOhm;
BSO064N03S INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 6,4 mOhm; RDS (ein) (max.) (@4,5 V): 8,8 mOhm;
BSO052N03SXT INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 5,2 mOhm; RDS (ein) (max.) (@4,5 V): 6,7 mOhm;
BSO052N03S INFINEON10+SOP-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-DSO-8; Paket: SO-8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 5,2 mOhm; RDS (ein) (max.) (@4,5 V): 6,7 mOhm;
BSC265N10LSF INFINEON10+TDSON-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 26,5 mOhm; RDS (ein) (max.) (@4,5 V): 36
BSC205N10LS INFINEON10+TDSON-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 20,5 mOhm; RDS (ein) (max.) (@4,5 V): 28
BSC159N10LSF INFINEON10+TDSON-8N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 12,3 mOhm; RDS (ein) (max.) (@4,5 V): 16

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