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IPD04N03LB
| INFINEON | 2010+ | SOT-252 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,2 mOhm; RDS (ein) (max.) ( @ |
IPD04N03LA
| INFINEON | 2010+ | SOT-252 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,2 mOhm; RDS (ein) (max.) ( @ |
IPD040N03LG
| INFINEON | 2010+ | SOT-252 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,2 mOhm; RDS (ein) (max.) ( @ |
SB158M
| LTSEP | 09+ | DIP-4 | æ¡¥å1/4æ'æμå ̈ |
SB158G
| LTSEP | 09+ | DIP-4 | æ¡¥å1/4æ'æμå ̈ |
IPD03N03LB
| INFINEON | 2010+ | SOT-252 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,2 mOhm; RDS (ein) (max.) ( @ |
IPD03N03LA
| INFINEON | 2010+ | SOT-252 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO252-3; Gehäuse: DPAK (TO-252); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,2 mOhm; RDS (ein) (max.) ( @ |
IPBH6N03LA
| INFINEON | 2010+ | TO-263 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 6,2 mOhm; RDS (ein) (max.) ( |
IPB80N06S2L11
| INFINEON | 2010+ | TO-263 | åçæ¶ä1/2管 N-Kanal MOSFETs (20Vâ¦250Vï1/4 |
SB156W
| LTSEP | 09+ | DIP-4 | æ¡¥å1/4æ'æμå ̈ |