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IPB06CNE8N
| INFINEON | 2010+ | TO-263 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 6,2 mOhm; RDS (ein) (max.) ( |
IPB06CN10N
| INFINEON | 2010+ | TO-263 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 6,5 mOhm; RDS (ein) (max.) |
IPB05N03LB
| INFINEON | 2010+ | TO-263 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 4,6 mOhm; RDS (ein) (max.) ( |
SB154G
| SEP/TSC | 11+ROH | DIP-4 | æ¡¥å1/4æ'æμå ̈ |
IPB05CN10N
| INFINEON | 2010+ | PG-TO263-3 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 5,4 mOhm; RDS (ein) (max.) |
SB152W
| LTSEP | 09+ | DIP-4 | Åç ̧æ¡¥å1/4æ'æμå ̈ |
IPB051NE8N
| INFINEON | 2010+ | PG-TO263-3 | åçæ¶ä1/2管 N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 85,0 V; RDS (ein) (max.) (@10V): 5,1 mOhm; RDS (ein) (max.) ( |
IPB04N03LB
| INFINEON | 2010+ | TO-263 | åçæ¶ä1/2管 -Kanal MOSFETs (20Vâ¦250V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,9 mOhm; RDS (ein) (max.) ( @ |
IPB04N03LA
| INFINEON | 2010+ | TO-263 | åçæ¶ä1/2管 -Kanal MOSFETs (20Vâ¦250V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 25,0 V; RDS (ein) (max.) (@10V): 3,9 mOhm; RDS (ein) (max.) ( @ |
IPB04CN10N
| INFINEON | 10+ | TO-263 | N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-TO263-3; Gehäuse: D2PAK (TO-263); VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 3,9 mOhm; RDS (ein) (max.) (@4,5 V |