ISL78213

• 产åä»ç»

ä ̧»è¦ç¹ç¹

É«æçåæ¥éåç ̈³åå ̈ï1/4æçé«è3/43/497ï1/4
çμæºè ̄å¥1/2ï1/4PGï1/4è3/4åº1msç延è¿
2.8Vè³5.5Vççμæºçμå
2ï1/4 è3/4åºç²3/4度Nadmierna temperatura/obciążenie/liniaç
3Ač3/4åºçμæμ
Å ̄å ̈é¢åç1/2®è3/4åº
å é ̈è1/2 ̄å ̄å ̈ - 1msç
È1/2 ̄åæ¢è3/4åºæ3/4çμæé'æ®ç3/4人
35μAçéæμæμå ̈PFMæ ̈¡å1/4
å ̄éæ©å1/4ºå¶PWMæ ̈¡å1/4åPFMæ ̈¡å1/4
é«è3/43/44MHzçå¤é ̈åæ¥
é»è3/4æ§å¶å ³æΧμæμå°äº1μA
100ï1/4 çæ大å 空æ ̄
å é ̈çμæμæ ̈¡å1/4è¡¥å¿
å³°å1/4çμæμéå¶åæåæ ̈¡å1/4çè· ̄ä¿æ¤
è¿æ ̧©ä¿æ¤
å°16 LD 4mmx4mm QFN
æ é ï1/4符åRoHSï1/4
TS16949çè§å®
AECQ100æμè ̄
æè¿°

ISL78213æ ̄ä ̧ç§é«æçï1/4åçåæ¥éååDC / DCè1/2¬æ¢å ̈ï1/4å ̄æä3/4é«è3/43/43Açè¿ç»è3/4åºçμæμä»2.2.8Vè³5.5Vçè3/4å ¥çμæºãå®éç ̈äºçμæμæ§å¶æ¶æï1/4å ̈é«é¢çæä3/4å¿«éç¬æååºååè¶çç ̄è· ̄ç ̈³å®æ§éå ̧ ̧ä1/2çå ©ç ºæ ̄å·¥ä1/2ãISL78213éæäºä ̧åä1/2çμé»Pæ²éåNæ²éå é ̈MOSFETï1/4以æ大é度å°æé«æçååå°å¤é ̈å 件æ°éã 100ï1/4 å 空æ ̄æä1/2å è® ̧å°äº300mVçåé3Aè3/4åºçμæμãé«è3/43/41MHzçèå²å®1/2度è°å¶ï1/4PWMï1/4å1/4å ³é¢çå ̄ä ̧å¤é ̈æ¶éåæ¥è³4MHzï1/4å è® ̧ä1/2¿ç ̈å°çå¤é ̈å 件åSYNCè3/4å ¥å è® ̧å¤ä ̧ªè ̄çåæ¥æ·æ±°ï1/4以åå°çº¹æ³¢åæ¶é¤æ¤æ �é¢ãISL78213å ̄以é ç1/2®ä ̧ºæç»æå1/4ºå¶è¿ç»å·¥ä1/2å ̈è1/2»è'è1/21/2ãå1/4ºå¶è¿ç»å·¥ä1/2éä1/2åªå£°åRFå¹²æ°ï1/4èÆç»æ ̈¡å1/4åéè¿éä1/2è1/2»è'è1/21/2æ¶çå1/4å ³æèï1/4æçé«ï1/4æ éä¿æ¤ç±å é ̈æåæ ̈¡å1/4çμæμéå¶å ̈çè· ̄åè¿çμæ¡ä»¶ä ̧ï1/4è3/4åºè¿åæ ̄è3/4å ̈åè¿æ ̧©åº¦çæ§μè· ̄æä3/4ãå1/2è3/4åºæ ̄å ̈第ä ̧ä ̧ªçμæºè ̄å¥1/2è3/4åºçμåçè§å ̈ISL78213æä3/4èç空é'ç4x4 QFNæ é æ é å°è£ ä ̧ä1/2çé»è£ ̧ççå1/4线æ¡æ¶ãISL78222 13å æ¬ä ̧åçä1/2å ̄1/4éçμé»Pæ²éåNééå é ̈MOSFETï1/4以æ大é度å°æé«æçååå°å¤é ̈å 件æ°éã100ï1/4…å 空æ ̄æä1/2å è® ̧å ̈3Aå°äº300mVåå·®çμåãISL78213æä3/41msççμæºè ̄å¥1/2ï1/4PGï1/4å ̈ä ̧κå®æ¶å ̈ãå1/2å ³æºï1/4ISL78213å ̄¹ È3/4źçμ容æ3/4çμãå ¶å®ç¹ç¹å æ¬å é ̈è1/2 ̄å ̄å ̈ï1/4å é ̈è¡¥å¿ï1/4è¿æμä¿æ¤ï1/4çå ³æãISL78213æ ̄å ̈16 LD 4mmx4mm QFNå°È£ æä3/4ä ̧1mmæ大é«åº¦ãå®æ'çè1/2¬æ¢å ̈å ç ̈é¢ç§ ̄å°äº0.4è±å ̄ ̧2ãISL78213æ ̄æ¢ç¬¦åAEC-Q100æ å级åTS16949çå åå 1/4容ãISL78214被è ̄ä ̧ºæ±1/2è1/2¦çº§æ ̧©åº¦èå'ï1/4-40°Cè³+105°Cæ¶ï1/4