型号 | 厂商 | 批号 | 封装 | 说明 |
IRF9510STRL
| IR | 10+ | TO-263 | 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管) |
IRF9510SPBF
| IR | 10+ | TO-263 | 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管) |
IRF9510S
| IR | 10+ | TO-263 | 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管) |
IRF9510PBF
| IR | 10+ | TO-220 | 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管) |
IRF9510
| IR | 10+ | TO-220 | 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管) |
IRF9511
| IR | 10+ | TO-220 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-220AB |
IRF9512
| IR | 10+ | TO-220 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.5A I(D) | TO-220AB |
IRF9513
| IR | 10+ | TO-220 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | TO-220AB |
IRF9520STRR
| IR | 10+ | TO-263 | 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 Ω, P沟道功率MOS场效应管) |
IRF9520STRL
| IR | 10+ | TO-263 | 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 Ω, P沟道功率MOS场效应管) |
IRF9520SPBF
| IR | 10+ | TO-263 | 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 Ω, P沟道功率MOS场效应管) |
IRF9520S
| IR | 10+ | TO-263 | 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 Ω, P沟道功率MOS场效应管) |
IRF9520PBF
| IR | 10+ | TO-220 | 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 Ω, P沟道功率MOS场效应管) |
IRF9520
| IR | 10+ | TO-220 | 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 Ω, P沟道功率MOS场效应管) |
IRF9523
| IR | 10+ | TO-220 | P通道增强型立式DMOS功率场效应管 |
IRF9522
| IR | 10+ | TO-220 | P通道增强型立式DMOS功率场效应管 |
IRF9521
| IR | 10+ | TO-220 | P通道增强型立式DMOS功率场效应管 |
IRF9530STRR
| IR | 10+ | TO-263 | 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 100V, 0.300 Ohm,P沟道功率MOS场效应管) |
IRF9530STRL
| IR | 10+ | TO-263 | 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 100V, 0.300 Ohm,P沟道功率MOS场效应管) |
IRF9530SPBF
| IR | 10+ | TO-263 | 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 100V, 0.300 Ohm,P沟道功率MOS场效应管) |