Nr. A8585 ç³»åæ ̈å ̈满足ä ̧ä ̧代æ±1/2è1/2¦é³é¢åä¿¡æ ̄å ̈±ä¹³»ç»çμæºä3/4åºè¦æ±ãA8585 ç³»åæä3/4é«çμæμç ̈³æμå ̈éè¦çæææ§å¶åä¿æ¤çμè· ̄ï1/4è3/4åºçμ ååç¡®çä ̧º ±1.0%ã
å ̈ PWM æ ̈¡å1/4ä ̧ï1/4Nr. A8585 ç³»åä1/2¿ç ̈çμæμæ ̈¡å1/4æ§å¶ï1/4以æä3/4ç®åçè¡¥å¿ãåºè²çç ̈³å®æ§åå¿«éçç¬æååºãå ̈ä1/2 IQ æ ̈¡å1/4ä ̧ï1/4A8585 ç³»åä1/2¿ç ̈èå²é¢çè°èï1/4å ̈ 12 VINæ¶èçμæμä1/2äº 33 Î1/4Aï1/4åæ¶æä3/4 5.0 V/40 Î1/4Aã
å ̈å·¥ä1/2æ¹é¢ï1/4A8585 ç³»åå ̄å ̈ä1/2è³ 3.6 VINï1/4åéï1/4ççμåä ̧å·¥ä1/2ãå ̄éçç¡ç æ ̈¡å1/4åè1/2å è® ̧æä1/2çå3/4 æºçμæμã
A8585 ç³»åçç¹è²å æ¬å ̄ç1/4ç ̈ç PWM å1/4å ³é¢çãç ̈³åå ̈å1/4å ³é¢çå ̄以åæ¥è³å¤é ̈æ¶éãA8585 æå¤é ̈è¡¥å¿ä»¥ä1/4åç ̈³å®æ§åç¬æååºï1/4é ååç§å¤é ̈å 件ååºç ̈ãA8585 æåºå®çè1/2 ̄å ̄å ̈æ¶é' 5 æ ̄«ç§ã
A8585 广æ³çä¿æ¤åè1/2å æ¬éèå²çμæμéå¶ãæåæ ̈¡å1/4çè· ̄ä¿æ¤ãå1/4è· ̄/çè· ̄å1/4æ¥äºæ管ä¿æ¤ãBOOT å1/4è· ̄/çè· ̄çμåä¿æ¤ãVINæ¬ åéå®åè¿çå ³æºã
A8585 éç ̈å ̧¦å¤é²çμæºæ¿ç 10 å1/4è SOIC å°è£ ï1/4åç1/4ï1/4LKï1/4ãè ̄¥å°è£ ä ̧ºæ é (Pb) å°è£ ï1/4å1/4èæ¡éç ̈ 100% é3/4é¡çμéã
åºç ̈
- æ±1/2è1/2¦ï1/4
- ä»ªè¡ ̈ç»
- é³åç³»ç»
- å ̄1/4èª
- HLK
- 家åºé³é¢
- ç1/2ç»åçμä¿¡
- å·¥ä ̧ç ̈
-
- 符åæ±1/2è1/2¦ AEC-Q100 æ å
- æ¿åé«è3/43/4 40 VIN ç©è'è·
- å ̄æ¿åä1/2è³ 3.4 VINï1/4å ̧åï1/4ï1/43.6 VINï1/4æé«ï1/4çæ éåæ¢
- ä ̧ºä1/2 IQ æ ̈¡å1/4ä1/2¿ç ̈èå²é¢çè°è (PFM)
- åè1/2é项ï1/4
- å ̄éç PWM/ä1/2 IQ PFM æ ̈¡å1/4ï1/4æ
- å ̄éç 10 Î1/4A ç¡ç æ ̈¡å1/4ï1/4èªå ̈ PWM/ä1/2 IQ PFM æ ̈¡å1/4éæ©ï1/4
- åºå®è3/4åºçμåé项ï1/43.3 V æ 5 Vï1/4åç¡®çä ̧ºÂ± 1.0%
- è3/4éé«è3/43/4 2.0 A è3/4åºçμæμ
- æ'å 110 mΩ é«ç« ̄ MOSFET
- 300 è³ 550 kHzï1/4éè¿åæ¥å ̄è3/43/4 605 kHzï1/4çå ̄è°å1/4å ³é¢ç
- EMI éä1/2åè1/2ï1/4
- å¤é ̈åæ¥åè1/2
- ä ̧»å ̈ä1/2 NPOR è3/4åºï1/4å»¶è¿ 7.5 æ ̄«ç§
- è1/2å¤å®ç°é¢åç1/2®å ̄å ̈ï1/4VOUT åè°å¢å ï1/4ä ̧ä1/4å1/4èμ·éç1/2®
- å ̄å©ç ̈å¤é ̈è¡¥å¿å®ç°æ大çμæ'»æ§
- å 1/4容é¶ç·æçμ解è3/4åºçμ容å ̈
- å é ̈åºå®è1/2 ̄å ̄å ̈æ¶é' 5 æ ̄«ç§
- éèå²çμæμéå¶ãæåæ ̈¡å1/4çè· ̄ä¿æ¤åçä¿æ¤
- å1/4èå1/4è· ̄/çè· ̄åå 件容é
- -40°C è³ 150°C çå·¥ä1/2ç»æ ̧©èå'
- å ·æå¢å1/4ºæ£çåè1/2ç SOIC-10 è¡ ̈é¢å®è£ å°è£