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BSC018N04LSG INFINEON11+TDSON-8Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 1,6 mOhm; RDS (o
BSC017N04NSG INFINEON11+TDSON-8Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 1,6 mOhm; RDS (o
BSC016N04LSG INFINEON11+TDSON-8Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 1,6 mOhm; RDS (o
BSC252N10NSFG INFINEON11+TDSON-8Néé 100.0 V 40.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 100,0 V; RDS (ein) (max.) (@10V): 25,2 mOhm; RDS
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TS25P07G LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
TS25P02G LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
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TS20P10G LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
TS20P01G LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
TS15P10G LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
TS15P08G LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
TS15P04G LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
TS10P10G LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
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SB603 LTSEP09+DIP-4æ¡¥å1/4æ'æμå ̈
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