主页 > 产品中心 > 场效应管
IRF610PBF
产品图片仅供参考
欢迎索取产品详细资料

IRF610PBF

  • 所属类别：场效应管
  • 产品名称：3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
  • 厂商：VISHAY
  • 生产批号：10+
  • 封装：TO-220
  • 库存状态：有库存
  • 库存量：80000
  • 最低订购量：1
  • 详细资料：点击查找IRF610PBF的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IRF610PBF    3.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)

与IRF610PBF相关的IC还有：


型号厂商批号封装说明
IRF610STRR VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRLPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610STRL VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610SPBF VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610S VISHAY10+TO-2633.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF610 VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF612 VISHAY10+TO-220N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614S VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614PBF VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)

热门搜索


型号厂商批号封装说明
C25-1AX-H13-N-HB-L HAIMOOO24+控制手柄控制手柄
F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATALOGIC22+DIPphotoelectric sensors
M393A8G40BB4-CWE Samsung21+BGASamsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba21+DIPOptocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt24+继电器瞬时继电器
RC16M23D28 SOURIAU-SUNBANK2023+连接器Standard Circular Contacts Crimp Socket Contact 16-20 AWG
CM300DY-24J Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
CM300DY-24Y Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
PT02E10-6S Amphenol Industrial Operations24+连接器CONN RCPT FMALE 6POS SOLDER CUP
KP02A14-15S Amphenol Corporation24+连接器Circular Connector, Receptacle, Size 14, 15 Position, Box, Product Range:Pt Series,
U-MULTILINK-FX NXP24+工具NXP U-MULTILINK飞思卡尔烧录器USB-ML-Universal 调试器PE仿真器
KPT02E8-4P ITT24+连接器Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE24+DIPHSC Family of Aluminium Housed Power Resistors 75W-500W dissipation capability, Gold anodization and two mounting flanges.
27914-30T12 ITT2023+连接器Contact Dimensions - Male F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC)24+工具DMC压线钳 原装进口正品
CMF8342T CMF23+模块T系列三极管放大器模块
RWR78N39R2FR Vishay24+DIPRES 39.2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI22+继电器STPI/REL ETP6 Relays Non-Latching, 6 PDT, 1 A, 72 VDC
MPS100ASC 三菱2024+工具精密位置检测器

VISHAY品牌产品推荐


型号厂商批号封装说明
IRF610 VISHAY10+TO-2203.3A,200V, 1.500 Ohm, N-Channel PowerMOSFET(3.3A,200V, 1.500 Ohm,N沟道增强型功率MOS场效应管)
IRF612 VISHAY10+TO-220N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614S VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614PBF VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614 VISHAY10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF615 VISHAY10+TO-220TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB
IRF620STRRPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRR VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRLPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRL VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620SPBF VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620S VISHAY10+TO-2635.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620PBF VISHAY10+TO-2205.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620 VISHAY10+TO-2205.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF621 VISHAY10+TO-220N-Channel Power MOSFETs, 7A, 150-200V
IRF622 VISHAY10+TO-220N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRR VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF624STRL VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF624SPBF VISHAY10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号