产ååå·äº§åå称æ¹å·ååå°è£æ°é 
BSC018N04LSG Néé 40.0 V 100.0 aåºæåºç®¡N-Kanal-MOSFETs (20Vâ¦250V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 40,0 V; RDS (ein) (max.) (@10V): 1,6 mOhm; RDS (o11+INFINEONTDSON-8 å é¤

æ ̈çå§åï1/4
å ¬å ̧å称ï1/4
å°åï1/4
çμè ̄ï1/4
çμåé®ä»¶ï1/4
é®ç1/4ï1/4
å¤æ³ ̈ï1/4

  继续选择