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BSC090N03LS N-Kanal-MOSFETs (20 V â 250 V); Gehäuse: PG-TDSON-8; Gehäuse: SuperSO8; VDS (max): 30,0 V; RDS (ein) (max.) (@10V): 9,0 mOhm; RDS (ein) (max.) (@4,5 V): 13,310+INFINEONTDSON-8 å é¤

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