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IDB12E120	1200V Silizium-Leistungsdioden; Gehäuse: PG-TO263-3; WENN (typ): 12,0 A; WENN (max): 28,0 A; IF,SM (max): 63,0 A; VF (typ): 1,65 V; IR (max): 100,0 μA;	2010+	Infineon	P-TO220-3-4		å é¤