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IPB120N06S4-03 Single: N-Kanal 60V MOSFETs; Gehäuse: PG-TO263-3; Technologie: OptiMOSâ¢-T2; VDS (max): 60,0 V; RDS (ein) (max.) (@10V): 2,4 mOhm; ID (max): 120,0 A; Rt10+INFINEONTO263-3 å é¤

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