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SPP20N60C3	N-Kanal-MOSFETs (>500 V â 900 V); Gehäuse: PG-TO220-3; VDS (max): 600,0 V; Gehäuse: TO-220; RDS(ON) @ TJ=25°C VGS=10: 190,0 mOhm; ID(max) @ TC=25°C: 20.	1010+	INFINEON	TO-220		å é¤